A new dual power MOSFET with remarkably low on-resistance
for this device type was released today by Siliconix. The new TrenchFET,
which is intended for use as a safety switch in lithium ion battery packs,
offers on-resistance of just 22 milliohms at a 4.5-V gate drive and 30
milliohms at a 2.5-V gate drive. Setting a record for dual device performance
in the LITTLE FOOT TSSOP-8, specifications for the new Si6968DQ constitute
nearly a third improvement over the previous state-of-the-art device in
this package.

To create the new Si6968DQ, Siliconix combined its latest 32 million-cell/inch2
TrenchFET technology with a novel common-drain design which allows a larger
active silicon area in the same size package as a standard dual device.
Since the MOSFETs used as safety switches in most lithium ion battery packs
are connected at the drain by the manufacturer, the Si6968DQ represents
an unusual synergy between the possibilities of Siliconix' TrenchFET power
MOSFET technology and the demands of a specific application.
"The Si6968DQ is, to the best of our knowledge, the world's first single
chip dual vertical MOSFET," said Phil Dunning, Product Marketing Director
at Siliconix. "But what cell phone designers will really value is getting
the on-resistance they need in a smaller package."
The Si6968DQ, with a height profile of just 1.1 mm, will provide significant
space savings compared to other packages typically used in the safety switch
application. Unlike many other 2.5-V-rated devices, furthermore, the Si6968DQ
features the 12-V gate-source voltage rating that most battery pack manufacturers
now consider a necessity.