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International Rectifier IRFxxxx 500-650 V MOSFETs

IR extends technology toolbox initiative with new high-efficiency HEXFET power MOSFETs ffor off-line switch mode power supplies

The manufacturer says . . .
Chipcenter's Paul McGoldrick says . . .

Extending its commitment to developing topology-specific solutions to customer power problems, International Rectifier (IR) now offers a family of HEXFET power MOSFETs rated from 500 to 650 Volts that delivers the highest efficiency available in mass production today for switch mode power supply applications.

These new devices feature on-resistance (RDS(on)) ratings as much as 50 percent lower than previous devices for optimum conduction efficiency in this voltage range in the same package outline, balanced with gate charge (Qg) characteristics that are reduced about one-third to achieve lower switching and drive losses. The new HEXFETs can reduce power losses within a power supply by as much as 30 percent, facilitating either a smaller heat sink and/or cooler operation within the existing thermal system. They are implemented using established IR process technology and manufactured in volume in IR's HEXFET America facility in Temecula, CA -- the world's largest power MOS production facility.

"In the power supply industry, obtaining MOSFETs with optimum efficiency, high reliability and low cost is the key to success," said Chris Ambarian, director of technical marketing for MOSFETs and IGBTs at IR. "Our new topology-specific high-voltage HEXFET devices extend our leadership position as the world's leading supplier of MOSFETs for switching power supplies, providing unrivaled efficiency and reliability at very attractive prices. They are companions to the recently announced low-voltage devices that shattered previous benchmarks for efficiency in power supplies for mobile Pentium II microprocessors and other DC/DC and synchronous rectifier applications."

Examples of the level of improvement are:
Go to Table

Continuing the trend started earlier this year, the new devices feature topology-specific data sheets that provide more useful ratings to the SMPS designer. The devices are characterized for several parameters at conditions seen in actual SMPSs, providing a much better indication of how they will actually operate in-circuit. Part numbers for the new series have also become more engineer-friendly, providing actual current ratings at a glance.

The numbers on the specifications for these parts say it all. Up to 50% reduction in on-resistances, up to a third off gate charge. The overall results: higher efficiencies, lower losses, less heat. International Rectifier have certainly raised the wall to the competition quite dramatically with this new multi-family announcement. There is no doubt that these new parts will get instant attention from power supply manufacturers who, in my opinion, have one of the toughest design areas of all in analog with nobody giving anybody an inch.

All the new devices are in full production. Data sheets are available on International Rectifier's website www.irf.com

Examples of the level of improvement are:

On-Resistance Improvements (Back to Top)

Voltage
Rating
Existing
IR Parts
Existing
RDS(on)
New IR
Devices
New
RDS(on)
RDS(on)
Reduction
Package
Type
500 V IRF840 0.85W IRF811N50A 0.52W 39% TO-220
500 V IRF1840G 0.85W IRFIB7N50A 0.52W 39% FullPak-220
500 V IRFP460 0.27W IRFPSS37N50A 0.13W 50% Super 247
600 V IRFBC40 1.2W IRFB9N60A 0.75W 38% TO-220
600 V IRFBC40G 1.2W IRFIB6N60A 0.75W 38% FullPak-220
600 V IRFBC40L 1.2W IRFSL9N60A 0.75W 38% TO-262
600 V IRFBC40S 1.2W IRFS9N60A 0.75W 38% TO-262
650 V

IRFB9N65A 0.9W
TO-220
650 V

IRFIB5N65A 0.9W
FullPak-220

Gate Charge Improvements

Voltage
Rating
Existing
IR Parts
Existing
Qg
New IR
Devices
New
Qg
Qg
Reduction
Package
Type
500 V IRF840 63 nC IRFB11N50A 49 nC 22% TO-220
500 V IRFP460 210 nC IRFP22N50A 140 nC 33% TO-262
600 V IRFBC40 60 nC IRFB9N60A 49 nC 18% TO-220

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