Designers of cellular phones can now get the output power and efficiency
of gallium-arsenide RF power amplifiers without the need for a separate
negative voltage supply - using two new chips introduced by Motorola. That's
because the new Motorola RF power amplifiers have a negative voltage generator
function integrated right on the chip.
Motorola engineers have designed the chips using an RF rectification
method to generate the negative voltage, which eliminates spurious outputs
often seen in designs that use a separate negative voltage supply - allowing
the Motorola units to transmit "spur-free" signals. The units
also include a Gate-Drain switching function which connects the negative
voltage to the gate before the positive supply is connected to the drain
- protecting the devices from any over current situation.
The two devices, types MRFIC0919 and MRFIC1819, are advanced three-stage
gallium-arsenide (GaAs) Integrated Power Amplifiers (IPAs) that use these
two key on-chip functions - the negative voltage generator and the Gate-Drain
switching function - to lower system and manufacturing costs by simplifying
the design process and reducing total parts count.
Because the new MRFIC0919 and MRFIC1819 are designed using a depletion
mode MESFET process in GaAs, they exhibit the best tradeoff of gain, efficiency,
cost and manufacturability available today. With the addition of the integrated
negative voltage generator, these IPAs provide the best of both worlds,
having high performance and efficiency with single supply operation. The
on-chip negative voltage generator is implemented using RF rectification,
preventing the generation of any spurious output signals.
The MRFIC0919 and MRFIC1819, operate at 900 MHz or 1.8 to 1.9 GHz respectively,
and are ideal for use in GSM or PCS cellular phones. The MRFIC0919 3.6
V, 900 MHz IPA is capable of providing a peak output power of 3.0 W, and
is designed to be used in 2.0 W GSM900 cellular phones. The MRFIC1819 1.8/1.9
GHz IPA is capable of providing a peak output power of 2.0 W, and is designed
specifically for use in 1.0 W DCS1800 and PCS1900 cellular phones.
"The new MRFIC0919 and MRFIC1819 represent the second generation
of GaAs integrated power amplifiers on our roadmap for 1998 and beyond,"
said Michael Civiello, Director of Marketing for Motorola's Wireless Subscriber
RF/IF Division. "These products incorporate enhanced features and
smaller surface mount packages which have not been available previously.
We are also in the process of doubling our GaAs capacity - to give us strong
leadership in manufacturing as well."
Both devices are packaged in a new high power, low profile surface mount
package, a special 16-pin TSSOP with a backside metal contact. The package
provides excellent thermal and electrical performance through this solderable
metal contact. This large contact area is physically connected to ground
of the MRFIC0919 and MRFIC1819, and is soldered to the pc board using the
same standard reflow process used for other surface mount components, simplifying
the system design and production processes. The high thermal conductivity
of this special TSSOP-16EP package allows these devices to provide RF output
power of at least 32 dBm, without consuming excessive board space. Click here for Motorola Wireless