Semiconductor maker, ROHM Co., Ltd., has developed a  world-beating leading Schottky barrier diode(RB055L-30)that achieves both low VF(forward voltage)and low IR(reverse current).

The new part (RB055L-30) achieves a previously unattainable combination of low VF and IR values: VF = 0.30 V at IF = 1.0 A; and IR = 50 micro-amp at VR= 30 V.

Makers of electronic equipment, especially lightweight, portable devices, constantly require partsthat have both ever-more-compact mounting footprints and which, to lengthen battery life, consume require less and less power. To minimize the power drain, it is necessary to reduce both the VF and IR of the indispensable miniaturized Schottky barrier diodes. There is a trade off, however, because trying to lower the VR VF usually causes the IR to rise. Reducing both values is a challenge of ingenuity.

The ability of the new RB055L-30 to maintain a low VF while also achieving large reductions in IR has been realized owing to the exclusive sub-micron processing technology developed at ROHM's top-flight diode production facilities. Not only does this component offer improved power efficiency , the design incorporates is a new structure for this type of device that, produced by our expert team at our world-class facilities, they also succeeds in ensuring that this Schottky barrier diode provides exceptional reliability against power surges and static dmage. Currently we are offering a 2-A model device but, in anticipation of the various needs of set makers system designers, we are busily working to produce a full range in the future that will include 3-A, 5-A, 10-A, 20-A, and 30-A models devices.