TriQuint Semiconductor, Inc. introduced the TGA1071-EPU, 36 to 40 GHz, pHEMT (pseudomorphic High Electron Mobility Transistor) MMIC Power Amplifier to support a variety of millimeter wave applications including Medium Capacity (Short Haul) and High Capacity (Backbone) Point-to-Point Digital Radio, and Point-to-Multipoint Digital Radio markets.

This IC provides sufficient small signal gain and output power in single ended configuration over this millimeter wave frequency range for most low and medium capacity digital radios. For higher output powers as required by high capacity digital radios, multiple devices may be combined. The IC operates at +5 Volts bias. Typical DC current consumption is 120 mA.

Performance

The TriQuint Semiconductor TGA1071-EPU is a monolithic power amplifier which operates from 36 to 40 GHz. This two stage power amplifier is capable of providing greater than 150 mW of output power at any frequency in its specified millimeter wave band when biased at 5 Volts, 120 mA. Typical small signal gain is 15dB. Typical reliability of the TGA1071-EPU when operated at a device channel temperature of 140 C is greater than 2 million hours Mean Time To Failure.

The TGA1071-EPU is a two stage amplifier with a pair of 300um gate width input devices driving two 400um gate width output devices. The active devices are realized using TriQuint's proven 0.25um gate length power pHEMT process.

The TGA1071-EPU is fabricated using TriQuint's 0.25 um T-Gate power pHEMT process. This device offers standard biasing with minimal off-chip components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance.

Applications

This amplifier's 150 mW output power over 36 to 40 GHz makes it an ideal power amp solution for point-to-point and point-to-multipoint digital radios at 38 GHz .

Package

The TGA1071-EPU is available in chip form. Physical size is 3.4 x 2.1 x 0.10 mm. Bond pad and backside metalization is gold plated for compatibility with eutectic alloy attachment methods as well as with thermocompression and thermosonic wire-bonding processes.

Support

There is a lot more going on at 38 GHz than many engineers, even RF engineers, realize. What staggers me about this part is that the power (150 mW) is probably optimal for many 38-GHz applications with the majority of system power gain being achieved in the antenna. It is also quite amazing that the part is running at 25% efficiency at these frequencies and that the company can achieve a 15 dB small-signal gain. I would not, however, call this a "power" amplifier as my definition of such starts at about 5 W output power; I would call it instead an RFA (radio frequency amplifier) and it obvious to the users that it is an output device.

To save you dictionary time "eutectic" is the combination of component materials to achieve the lowest melting point, so in other words, the packaging was developed to be put together at the lowest practical temperatures.