Latest in Ericssonýs range of high technology RF power transistors is the PTF10053. Rated from HF to 2.0GHz, the tiny 4x5mm transistor exhibits an impressive 12W minimum output power.

mploying GOLDMOS technology, overall linearity and gain are superior to bipolar equivalents. Designed for operation from a standard 26-28V supply, the part has a useful minimum power gain of 10dB at 2GHz with minimum of 40% of drain efficiency. At 4W PEP (Peak Envelope Power), the class AB third order two-tone IMD figure is a low -42dBc. Robust and rugged, the part has a drain-source breakdown voltage of 65V.

Because the part has no internal matching, it is suitable for use at all frequencies up to 2GHz. As a result, the PTF10053 can be integrated into any base station application including mobile phone and television. Exhibiting flexibility, the 12W output means that the part can be used as a pre-driver, driver or even output stage.

Offered in the compact 20244 package, the PTF10053 is a suitable alternative to MRF282 types. Also available is the PTF10041 which is identical to its brother in terms of performance, but utilises slightly different 20249 package, enabling a direct heat sink contact arrangement.

Well Ericsson are certainly making an impression with me! The company is obviously targeting just about every RF power application with LDMOS that they can. A 2-GHz 12-W device can make business from short-wave transmitters to cellular phone base station, with FM radio, VHF and UHF television in between. Used either as an output device or a driver the market is immense, most of it in areas where absolute efficiency is not the primary consideration. Many of these parts will find their way into multiple-device panels giving much larger combined output power but with considerable redundancy.