|
Fairchild Semiconductor introduced a new low-threshold, P-Channel Power MOSFET featuring the lowest ratio of RDS(on) to package size in the industry. Using Fairchild's advanced PowerTrenchı process, the new SuperSOT-6 FDC6306P low-threshold (2.5-volt), true dual power, P-Channel MOSFET significantly increases power dissipation over competitive devices in similarly-sized packages. With its low threshold requirement, very small footprint and exceptional RDS(on) of 160 mW, the FDC6306P is ideal for small, battery operated applications, such as cellular phones, PDAs, and video cameras.
The FDC6306P delivers significant design benefits in addition to the high power dissipation per package size. With two MOSFETs in the same package, and a very small footprint, the FDC6306P can replace two SOT-23 packaged MOSFETs, or one or more of the larger, more expensive SO-8 or TSSOP-8 type devices. The FDC6306P is 72 percent smaller than the SO-8 packages commonly used for competitive P-Channel power MOSFET products. In addition, its low-threshold operation eliminates special interface circuitry for the level shift ability. These factors result in reduced board space requirements, a reduced number of package insertions, and potential manufacturing and inventory cost savings.
|
The story here of course is size -- in a market where every square millimeter is important -- and the first company there gets the business. The on-resistance is totally acceptable for most uses in portable products and the 2.5-V threshold voltage will delight designers. If you have a use for a dual p-channel MOSFET in your design this is a must-look-at product -- the price is right as well.
The FDC6306P is in production in the SSOT-6 and is priced at $0.64 in 1000-piece lots.
|