Toshiba America Electronic Components, Inc. introduced its new MT radio frequency (RF) transistor family. The new MT3S03T and MT3S04T benefit today's communications marketplace by providing the lowest voltage available on an RF transistor at 1 volt (V. This new family of RF transistors also provides low Vce (sat and low capacitance at fT = 7 GigaHertz (GHz) for the MT3S03T and fT = 10GHz for the MT3S04T).

The MT family of RF transistors is optimized for dual-band, dual-mode applications where battery life is essential to enhance performance. In addition to providing superior power capability, the MT family uses TESM packaging which is one of the smallest packages available on the market today. Targeted applications include digital cellular, Personal Communications Systems (PCS), digital cordless phones and personal digital assistants (PDAs). Also targeted for use in wireless local loop (WLL) and voltage controller oscillators (VCOs), the MT family enables original equipment manufacturers (OEMs) to create more affordable, longer-operating mobile communications devices able to function seamlessly throughout North America.

"The introduction of Toshiba's new MT RF transistor family establishes our commitment to the wireless communications market as well as leverages the company's expertise in mixed-signal and analog technologies," said Abdul Aslami, business development manager, Toshiba's Microwave and RF Products. "With this new development, we are able to offer communication systems designers the best performance currently available."

The enhanced operational characteristics of the MT family provides OEMs with the design flexibility they need to increase system power efficiency for longer talk and standby times, as well as keeping overall system space, weight and cost to a minimum. By feeding more of the collector signal back to the base, the feedback capacitance improves voltage dependency and output characteristics with smaller parasitic capacitance. In addition, characteristics and high current area are improved.

The 1-V supply barrier was broken by Motorola, first with its op amp, a little over two years ago; this is just as important a story because of the incredible importance being assigned to battery life in portable/handhelds. And, of course, the lower the supply voltage can allowed to fall in a product the longer the power source life. We are still some way from having complete 1-V product operations -- that will need a breakthrough in power amplifier architecture -- but every development stage like this brings us closer to that ideal.

The gains and noise figures from the transistors are ideal for the LNA stages in dual-band products as well as discrete mixers and VCOs; the latter use is not necessarily the way that most manufacturers are going, but the prices and performance will attract more discrete solutions. The package size is also extremely small, and great effort has been made in the design to improve the performance at high current, while still preserving the performance and reducing parasitic capacitances at the lower voltage end of operation. You may note that there are some discrepancies in specifications between the written part of this release and the table: I believe it is the table that is incorrect.

These will be wildly successful parts.