Sirenza Microdevices has expanded its SPA Series of linear power amplifier radio frequency integrated circuits (RFICs) with the addition of two new high-gain models for cellular, PCS and 3G equipment applications. Performing as driver amplifiers for wireless infrastructure equipment, the SPA-2118 and SPA-2318 are gallium-arsenide (GaAs) heterojunction-bipolar-transistor (HBT) devices covering the 850 MHz, 1950 MHz and 2150 MHz frequency bands. The devices feature 32 dB of gain at 900 MHz (SPA-2118), and 23 dB of gain at 1.9 and 2.1 GHz (SPA-2318), respectively. In addition, Sirenza says that the new PAs offer exceptional linearity previously unavailable in a single integrated circuit.

"Our SPA amplifiers are powered with a single +5V supply voltage with an on-chip active bias circuit providing consistent performance over temperature," said engineering vice president Greg Baker in a prepared statement. "These devices offer typical third-order intercept points of +47 to +48 dBm, IS-95 channel power of +23 to +24 dBm, and W-CDMA (10.5 dB peak-to-average modulation, 64 DPCH + overhead channels) channel power of +21.5 dBm at -45 dBc adjacent channel power (ACP)."

Sirenza Microdevices, 726 Palomar Ave., Sunnyvale, California. Phone: 408-616-5400; Toll-Free (U.S.) 1-800-764-6642; Fax: 408-739-0970

The Sirenza Microdevices, (you might remember them as Stanford Microdevices - they changed their name in June 2001 after a disagreement with Stanford University) SPA family of amplifiers is manufactured using a patented GaAs Heterojunction Bipolar Transistor (HBT) technology and is fabricated using Molecular Beam Epitaxy (MBE) technology. The company says that the MBE fab process allows for more repeatable results and hence fewer problems. Sirenza also uses a qualification procedure that consists of a series of tests designed to stress various potential failure mechanisms that could arise from the various die and package failure mechanisms that are stressed. The qualification testing is based on JEDEC test methods.

This chip will do well because it uses a single +5V supply voltage with a much desired on-chip active bias circuit. The active bias circuit will provide consistent performance over temperature. The SPA-2118 is specifically designed for use as a driver amplifier for infrastructure equipment in the 850 MHz band. Applications include IS-95 CDMA systems, multi-carrier, and AMPS or ISM applications. The SPA-2318 also is designed for use as a driver amplifier but for the 1960 and 2140 MHz bands. Applications include W-CDMA Systems, and PCS Systems. Designers of multi-carrier and digital applications will appreciate the high linearity of both devices. Take a look at the data sheets (listed below) and see for yourself the linearity graph results.

The company reports that they perform 100-percent production testing on these parts using digital-modulation waveforms. It is packaged in standard surface-mount SOIC-8, in a plastic encapsulated ExposedPad 8 package with backside metallization. The devices are priced at $9.90 each in 50K quantities.