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  Content-Addr Memory

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 Memory Technology -- Content-Addr Memory Subsections 
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- Memory Technology (Top Page) -

    New Products

Low-power CAM grows out of acquisition
Cypress Semiconductor Corp. this week plans to announce a low-power, content-addressable memory (CAM) that represents the first fruits of its acquisition of Lara Networks Inc. The two San Jose, Calif., companies merged in July, part of Cypress' ongoing push to become more of a communications player. (EE Times)
Virage's embedded CAMs add speed, cut cost of networking designs
As network hardware designers are squeezing more functionality into less space, while simultaneously striving to improve performance, Virage Logic has developed a high-performing CAM that allows the company to optimize critical design factors such as speed, power, and area. (ChipCenter: Networks)
Genesys introduces CAM BIST
Genesys Testware announced the first commercially available Built-In-Self-Test (BIST) product for Content Addressable Memories (CAMs). (ChipCenter: ASIC)
SiberCore Technologies and UMC announce fabrication of world's highest density Ternary CAM
SiberCore's latest and most advanced product, the SiberCAM Ultra-9M, was fabricated using UMC's 0.15-micron technology and has demonstrated excellent initial yields. The Ultra-9M utilizes the foundry industry's smallest SRAM cells (3.15um2), enabling over 9.4 million ternary storage elements to be integrated with significant amounts of network processing logic elements in a single chip. (ChipCenter: WebScan)
Suppliers ready 9-Mbit CAM engines
Suppliers of content-addressable memory (CAM) devices said they are experiencing robust demand for their specialized lookup engines, and are working on higher-density CAMs while forging alliances with networking-silicon vendors to develop reference designs in an effort to promote wider use of these niche products. (EE Times)
CAM jam: music's scheduling & sorting chip speeds QoS
MUSIC Semiconductors Inc. today introduced an application specific standard product (ASSP) family that combines proprietary Active Memory technology with embedded microsequencer techniques to manage packet prioritization and Quality of Service (QoS) in today's high-speed networks. (ChipCenter: Networks)

    Product Reviews

MOSAID's 9 Mbit DRAM-based CAM saves power, money, and space
Designed for high-speed data packet classification and forwarding applications, the 9 Mbit DC9288 is the world's first high-performance ternary CAM based on dynamic random access memory (DRAM) technology. (ChipCenter: Networks)

    News

Micron outlines push into CAM arena
Looking to alter the landscape in one networking-IC market, Micron Technology Inc. outlined its strategy in the content addressable memory (CAM) arena, disclosing plans to move CAMs from their current niche status to high-volume products for a broader range of applications. Micron is also aggressively selling and developing three new families of ternary CAMs--called Melody, Harmony, and Chorus. (EE Times)
Micron Technology, Inc., announces acquisition of Music Semiconductors, Inc.'s Ternary Content Addressable Memory assets
'As we continue to meet the emerging needs of our advanced networking customers, these TCAM assets will help facilitate more rapid expansion in our product line and development of the memory solutions our customers need going forward,' said Jerry Johnson, Micron Strategic Marketing Manager for Networking and Communications. 'CAMs are the preferred solution to perform the extremely fast searches necessary for high speed networking.' (ChipCenter: WebScan)
Music Semiconductors to sell CAM technology to US Co
Philippines company Music Semiconductors Inc (MSI) has arrived at an in-principle agreement to sell its ternary CAM intellectual property assets to United States-based Micron Technology for US$ 4.5 million, its parent company Music Corp announced in a disclosure to the Philippines Stock Exchange. (e-inSITE)

    Resources

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Georgia Ann Beyersdorfer, Memory Technology consulting editor, has currently completed Suffolk University with a Bachelor of Science in Electrical Engineering.
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