DRAM

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New Products

Infineon Technologies announces availability of 256-Mbit reduced latency DRAM
Designed specifically for use in high-speed networking and fast cache applications, RLDRAM is an ultra-high speed Double Data Rate (DDR) SDRAM that combines fast, random access with extremely high bandwidth and high density. Operating at clock frequencies up to 300 MHz and using a DDR interface, RLDRAM supports a sustained bandwidth of 2.4 Gbytes/s, while allowing random access within each of its 8 banks. (ChipCenter: WebScan)

News

- New - Micron Technology, Inc., acquires Toshiba's commodity DRAM business
Micron Technology, Inc., today announced the acquisition of Toshiba's commodity DRAM operations at Dominion Semiconductor, L.L.C., a subsidiary of Toshiba Corporation of Japan located in Manassas, Virginia. Micron paid $250 million in cash and issued 1.5 million shares of Micron Common Stock to Toshiba in exchange for the Dominion DRAM assets. (ChipCenter: WebScan)
- New - Elpida, Hynix entries further muddy network DRAM waters
Network systems designers beware: If the low-latency memory market seemed fragmented before, it is about to be diagnosed as downright schizophrenic. At the end of this month, Elpida Memory Inc. and Hynix Semiconductors will detail similar, proprietary designs that will match up against two separate standards being pushed by competing memory manufacturers. (EE Times)
Infineon seeks to shore up DRAM position
Vying for a prime position in the global DRAM market, Infineon Technologies A.G. is once again turning to Taiwan for help. The company confirmed last week that it is meeting with Nanya Technology Corp. to discuss a potential DRAM alliance, a move that would contribute to Infineon's efforts to garner enough capacity to compete with its larger competitors. (Electronic Buyers' News)
Samsung samples low-power 512Mbit DRAM
Like all low power mobile memory chips, the new Samsung 512-Mbit SDRAM operates at 2.5 volts, compared to 3.3V for conventional memory. It also uses half the power of standard SDRAMs in standby mode through a partial array self refresh of only those memory banks containing data, according to the company. (Electronic Buyers' News)
Powerchip licenses 0.10-micron process from Mitsubishi
Mitsubishi signed a memorandum of understanding (MOU) with Powerchip today, which will receive a 0.10-micron process for making dynamic random access memory (DRAM). Hsinchu-based Powerchip is planning to use the new technology in its 300mm wafer fab beginning in the second half of next year. (EE Times)
Global DRAM prices to pick up in 2002, analyst says
Global DRAM prices will rebound to $2 to $3 per die (128Mbit equivalent) in the first half of 2002 as demand increases, according to a forecast by the Market Intelligence Center (MIC), a Taiwan-based IT research and consultancy house. The forecast is based on the assumption that DRAM makers will be unable to increase production capacity fast enough to meet the rapid increase in demand for DDR DRAM in the first quarter of 2002, MIC said. (Electronic News)
Winbond Electronics Corporation announces strategic alliance with Infineon Technologies AG for 0.11-micron DRAM technology
Under the terms of the MOU, Winbond will manufacture commodity DRAMs for Infineon using 0.11-micron DRAM technology in its 8-inch fab, where this technology is slated to ramp up in the first quarter of 2003. This collaboration places Winbond's DRAM fabrication technology on par with leading DRAM manufacturers in the industry. (ChipCenter: WebScan)
Memory, storage and glass in demand
Even before the upturn kicks into gear, segments of the electronics industry are showing signs of increased demand, rising prices and potential shortages. DRAM is up; storage units are selling briskly and glass is promising to come into short supply, particularly with the release of flat-panel iMacs. (Electronic Business)
Toshiba cuts capacitor from DRAM cell design
Toshiba Corp. has developed a one-transistor, no-capacitor cell structure that it claims solves the difficulties encountered in producing DRAMs in sub-0.1-micron process technology. (EE Times)
Memory makers slow to pursue faster DDR DRAMs
Citing manufacturing and test costs, many memory makers are shunning proposals to populate dual-in-line memory modules with DDR-1 devices running at 400 MHz. The so-called DDR400 specification, if it reaches the light of day, may get limited penetration in specialty applications like graphics cards. (EE Times)

Resources

ChipCenter Reference Library
This is your access point for lots of good information covering applications, design tools, consultants, intellectual property, trade shows and standards.
Standards Watch
Here is your access point to the standards world.

Georgia Ann Beyersdorfer, Memory Technology consulting editor, has currently completed Suffolk University with a Bachelor of Science in Electrical Engineering.
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