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New 60V Trench MOSFET Devices Provide Industry's Lowest RDS(on) And Exceptionally Low Gate Charge For 12V Automotive Applications

The
manufacturer says...

Chipcenter's
Nasser Kutkut, Ph.D., says...

Fairchild Semiconductor introduces three new 60V N-Channel trench MOSFETs specifically designed for high-current automotive applications such as motor/body load control, ABS, power train management and injection systems. The FDB035AN06A0, FDP038AN06A0 and the FDD10AN06A0 are the first 60V devices from Fairchild's new line of medium-voltage (60V-150V) PowerTrench® products targeting automotive applications. (In May 2002, Fairchild announced three 75V trench MOSFETs for 42V automotive applications.) The MOSFETs in this family are successfully qualified according to the internationally accepted AEC Q101 standard and their PowerTrench technology offers the lowest RDS(on) per package type in the industry. With their very low gate charge, these medium-voltage devices are particularly well suited for high-power applications. Typically, in many of the new automotive applications several devices must be paralleled to achieve a very low overall switch resistance. But because of the low gate charge of PowerTrench MOSFETs, the required drive current -- and therefore the size of the drive circuitry -- is reduced. For example, the FDB035AN06A0 features a total gate charge of 124nC, combined with an ultra-low RDS(on) (3.5 milliohms maximum at room temperature in TO-263). For inductive load switching the device has an unclamped inductive surge (UIS) capability for single and repetitive pulses (625mJ @ 70A). "The FDB035AN06A0, FDP038AN06A0, and the FDD10AN06A are only the first of many new 60V PowerTrench MOSFETs we will release in the coming months," says Greg Hendry, marketing manager for automotive MOSFETs in Fairchild's Discrete Power Business Unit. We are currently characterizing other 60V, 100V, and 150V devices and will release them for production as soon as the characterization is complete. Samples of many of these devices are already available today." PowerTrench devices are developed and manufactured in Fairchild's 8-inch discrete power wafer fab, in Mountaintop, Pennsylvania; a manufacturing plant long recognized by industry observers for its technical leadership in power discretes for the automotive industry. Price: US$ 3.80 each (1,000 pcs.) for the FDB035AN06A0 and US$ 1.32 each for the FDP038AN06A0 (1,000 pcs.) for the FDD10AN06A0. Availability: September 2002

Parallel MOSFETs are typically used in high power applications to provide high current carrying capability as well as low enough RDS(on). While paralleling MOSFETs is straightforward for the most part, the size and complexity of the drive circuitry can become quite large. The higher gate charge with a parallel device requires higher drive current, thus increasing the size and power rating of the drive circuitry. To alleviate this drawback, lower gate charger devices are required. Nowadays, power device manufacturers strive to come up with devices that have low RDS(on) as well as low total gate charge. The 60V PowerTrench MOSFETs from Fairchild feature such low total gate charge making those devices ideal for paralleling in automotive applications. With less than 124nC of total gate charge at 3.5 milliohms, the new series offers optimal performance in terms of switching speed and low RDS(on). If you're interested, watch for the release of those devices fairly soon.

Press Release

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