Royal Philips Electronics today announced a new line of N channel metal oxide semiconductor field effect transistors (MOSFETs) in the thin small outline package 6 (TSOP6) - based on the innovative ıTrenchMOSTM technology. With a footprint of 9.3mm2, or smaller than the tip of a match, the ıTrenchMOS TSOP6 devices enable the creation of smaller, lighter, and more powerful portable products such as PDAs, notebook PCs, and domestic appliances such as electric shavers and toothbrushes. The new ıTrenchMOS' TSOP6 devices feature very low, on resistance Rds(on) and are rated at 30V, 20V and 12V Vds. The lower a MOSFET's Rds(on), the less power is dissipated by the product, thus increasing battery life. The TSOP6 offers superior thermal and electrical qualities providing benefits such as decreased levels of power dissipation down to 1.4W in addition to cooler running temperatures. "As high performance mobile devices like phones, laptops and PDAs pack in more functionality and processing power, space for key components becomes more confined, leading designers to look for smaller silicon solutions that offer improved power capabilities and comparable performance standards," said Ian Moulding, international product marketing manager for Power, Philips Semiconductors. "The introduction of the ıTrenchMOS portfolio marries Philips' established ıTrenchMOS technology with its expertise in small package manufacturing and offers designers a simple solution to their power and design requirements." ıTrenchMOS products can be dropped into a range of applications as replacements for larger existing packages or in completely new designs. Samples of the TSOP6 are available now. Further ıTrenchMOS product releases in TSSOP8, SC70 and SC88 will follow in Q4, 2002

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