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Fairchild Semiconductor International introduces the first six products in a new family of medium-voltage, PowerTrench® MOSFETs in SO-8 packages tailored specifically for applications requiring efficient, high-frequency switching. The flagship products offer not only the lowest total gate charge and Miller charge essential for fast switching, they also have the lowest RDS(on) in their class. For example, the FDS3672 has 12% lower RDS(on) max and 35% lower Miller charge than the closest competitor. This very versatile technology is avalanche-rated and extensively tested. The new 100/150V MOSFETs are especially effective in both conventional and high-density isolated DC/DC power supplies for communications and industrial markets. Typical applications for these products include popular telecom brick designs, which are optimized by using the 100V MOSFET in half- or full-bridge topologies, and the 150V MOSFET in forward topologies. This range of 100V (FDS3672, FDS3682, FDS3692, FDS3992) and 150V (FDS2572, FDS2582) MOSFETs provides a choice of RDS(on) vs. gate charge trade-offs to benefit each applicationıs particular operating conditions. To further improve switching characteristics in power supply designs, the internal gate resistance of the new MOSFETs is greatly reduced, allowing the benefits of the low gate charge to be realized. Low gate resistance and careful tuning of the gate-to-source and Miller capacitances is important for limiting the effects of potentially destructive drain-to-gate coupling that occurs during fast voltage transitions on the MOSFET drain. "By offering the lowest RDS(on) and the lowest gate charge, these products are the industryıs best SO-8-packaged, 100V and 150V MOSFETs," said David Grey, Fairchildıs Technical Marketing Manager. "They have the optimal combination of characteristics for DC/DC power supply designs and have been evaluated in a number of common topologies for efficiency gains over previous technologies. These MOSFETs are complementary to Fairchildıs PWM controllers, enabling design of complete isolated and non-isolated power supplies."
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Continuous improvements in power semiconductor device technology yield comparable improvements in system performance, reliability, and efficiency wherever such devices are used. With MOSFETs, the key performance parameters include R DS(on), total gate charge, and Miller effect capacitance. Improving these parameters will reduce both switching and conduction losses of the device (and the system) yielding higher efficiency, higher power density designs, and simpler drive circuitry. These are some of the features of the new 100V and 150V series PowerTrench MOSFETs from Fairchild. The new devices feature 12% lower maximum RDS(on), and 35% lower Miller charge than comparable devices. The greatly reduced internal gate resistance coupled with lower gate-to-source and Miller capacitances greatly limit destructive high dv/dt coupling from drain to gate, which further improves reliability. These devices are available in the standard SO-8 package.
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