IXYS Corporation has announced the availability of the PLUS264 HiPerFET™ MOSFETs. The PLUS264 package is approximately 50% larger then the TO-247 and enables the discrete packaging of IXYS' large-scale MOSFET die technology previously available only in modules. This new family provides the lowest Rds(on) and gate charge available in a discrete PCB compatible package. PLUS264 HiPerFET™ rated for 500V, 550V, 600V, 800V and 1000V will be available in December 2002. Products offered include the IXFB80N50Q rated at 80A and 500V with an Rds(on) of 55 milliohms and gate charge of 290 nanocoulombs, and the IXFB38N100Q rated at 38A and 1000V with an Rds(on) of 260 milliohms and gate charge of 230 nanocoulombs. These parts are rated for 890W at a case temperature of 25ºC, with a thermal resistance of .14ºC/W. The IXFB80N50Q is available at $17.64 and the IXFB38N100Q is available at $28.20 in 100 piece quantities, with pricing under $13 and $19 respectively in high volume quantities. These devices use IXYS advanced "Low Gate Charge" HiPerFET process and are optimized for high power applications above 10kW and operate efficiently at frequencies up to 1 MHz. Typical applications are off-line AC-DC Power Distribution Systems and MRI. In Power Distribution systems, IT and Telecom power supplies can greatly benefit from significant efficiency increases and higher power densities. MRI products would see an improvement in response and bandwidth of gradient amplifiers operating at higher voltages. The PLUS264 extends the power of through-hole leaded parts useable with more cost-effective PCB assembly methods verses screw-style power connections of other large module devices like the SOT-227.

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