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New 40V MOSFETs With Low RDS(on), Ruggedness, and Compact SO-Package Offer Efficiency/Cost Benefits in Demanding Portable/Handheld Applications

The
manufacturer says...
Chipcenter's
Nasser Kutkut, Ph.D., says...

Fairchild Semiconductor International introduces the FDS4770, FDS4470, FDS4780, FDS4480, and the FDS4672A, five N-channel 40V MOSFETs for DC/DC conversion that offer excellent price and efficiency benefits in power supply designs for laptop, computer VRM, telecom, datacom/router and other portable/handheld applications. The FDS4770, at 7.5mOhms max, has an extremely low RDS(on) rating for a 40V, SO-8 and has a 175ºC maximum junction temperature allowing a higher current rating than previously available. The 40V MOSFETs offer extended avalanche energy capability for rugged operation--a reliability advantage in applications with high transient voltage activity or operating modes where MOSFETs are subjected to increased stress. Depending on the input and output voltages demanded by a particular application, these 40V MOSFETs can be used as synchronous rectifiers or as primary or high-side switches in isolated and non-isolated power supply designs. All five products offer optimum performance and cost tradeoffs in low-voltage power applications requiring high efficiencies and power densities. The low gate charge of the FDS4470 makes it very efficient at high frequencies, placing less stress on driver circuitry. The FDS4480 offers an alternative RDS(on) versus gate charge trade off and is very price competitive. The FDS4672A also offers a lower threshold voltage for low gate drive applications. The FDS4780 is a lower on-resistance version of the FDS4480 with the same gate charge for the best RDS(on) versus Qg figure of merit. These products are complementary with Fairchild's solutions for DC/DC conversion as optically isolated amplifiers (FOD27XX), fast recovery diodes, and PWM controllers. Samples and production quantities available now. For more information, contact Fairchild Semiconductor's Customer Support Center at (888) 522-5372, fax (972) 910-8036, or visit Fairchild's website at www.fairchildsemi.com.

Power MOSFET device characteristics requirements vary from one application to another. In most applications, having devices with the best on-resistance, RDS(on), and lowest gate charge, Qg, is the main design requirement, although there is usually a tradeoff between the two. In other applications, other characteristics that may be irrelevant become extremely important, an example of which is the avalanche energy rating in environments with high transient voltage activity. To meet these varying design requirements, Fairchild has introduced a new family of 40V MOSFETs targeted towards power supply designs for telecom and other portable/handheld applications. In addition to having very low RDS(on) and Qg combination tradeoffs, the new series feature extended avalanche energy capability for rugged operation and 175ºC maximum junction temperature. Designers have a slew of devices to choose from to get the best trade off in meeting their design requirements.

Press Release


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