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International Rectifier Introduces Economical, High-Power, 150 kHz IGBTs for High-Frequency SMPS Applications

The manufacturer says...

Chipcenter's Nasser Kutkut, Ph.D., says...

International Rectifier, IR®, introduced their new WARP2™ 600 V 50 A, 35 A, and 20 A non-punchthrough (NPT) IGBTs with improved turn-off characteristics for high-current, high-frequency switch-mode power-supply (SMPS) circuits in telecom and server systems. The new WARP2 NPT IGBTs offer performance and efficiency with a better price-to-performance value than power MOSFETs. The WARP2 IGBTs are co-packaged with HEXFRED® diodes, which enable better performance compared to the integral-body diodes in power MOSFETs. The new devices are available in the TO-247 and TO-220 packages. "The new WARP2 IGBTs are the best choice for both PFC and ZVS applications, especially when price is as important as performance. These devices offer the benefit of lower conduction losses compared to a power MOSFET, and can efficiently operate up to 150 kHz due to its very short tail current. IGBTs have much better current density than power MOSFETs, so fewer devices may be required, saving cost and improving the power density," said Bhasy Nair, International Rectifier Marketing Manager for the AC-DC Sector. The new WARP2 IGBTs are made with IR's thin-wafer technology, which ensures a shorter minority-carrier depletion time and hence faster turn-off. In addition, a negligible turn-off tail current and low turn-off switching loss, or EOFF, enable designers to achieve higher operating frequencies. The improvement in switching performance, combined with positive thermal-coefficient characteristics and the lower gate turn-on charge, enables a higher current density. The WARP2 IGBTs exhibit excellent current-sharing properties like power MOSFETs when operated in parallel. Unlike power MOSFETs, the conduction losses of these IGBTs remain essentially flat. The new SMPS NPT IGBTs handle as much as 50 A in the TO-247 package, which is 85% more current capacity compared to IR's 600 V MOSFET in the same package, and up to 20 A in TO-220 package, or 18% more current capacity compared to IR's 600 V MOSFET in a TO-220 package. The new high-frequency NPT IGBTs are available immediately. Pricing begins at US $1.03 each for the IRGB20B60PD1 in 10,000-unit quantities.

IGBTs offer increased current-carrying capability compared to power MOSFETs, especially at higher voltage levels (a few hundred volts and above). Unlike MOSFETs, fewer devices are needed with IGBTs, which simplifies the design of the power circuitry and improves reliability. The IGBT conduction power losses are quite a bit lower than those of MOSFETs. However, their switching losses are relatively higher. This is mainly due to the tail-current phenomenon associated with IGBTs, which sustains current flow in the device during the off state. International Rectifier's new non-punchthrough (NPT) IGBT device technology significantly shortens the tail-current time while boosting the IGBT performance in SMPS applications. IR's next-generation WARP2 IGBTs feature a shorter minority-carrier depletion time and a negligible turn-off tail current, leading to low turn-off switching losses. These devices can be used at frequencies of up to 150 kHz, allowing them to replace MOSFETs in a variety of SMPS applications.

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