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Provided in an SM8 package, the ZXMHC6A07T8 MOSFET H-bridge from Zetex reduces board space and simplifies design in motor-drive applications. The low gate charge of the co-packaged n- and p-channel Trench MOSFETs, coupled with on-resistances of just 0.3 and 0.425 W respectively, and a 60 V breakdown capability makes the device easy to drive and removes the need for buffering.
By replacing four discrete MOSFET component placements with one, the H-bridge chip saves significant PCB space. The compact SM8 package occupies a maximum area of just 7.3 mm by 6.7 mm.
The proprietary lead-frame design of the SM8 package provides a low thermal resistance of 56°C/W that allows for cool running and results in a power dissipation of 2.25 W and an output current up to 2.2 A.
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Are you looking for an H-Bridge MOSFET package for your next motor-drive design? Check out the new Zetex SM8 H-Bridge package, which houses n- and p-channel Trench MOSFETs rated at 60 V. Unlike with discrete devices, PCB real estate is minimized and driving requirements are made easier by eliminating the need for buffering. The new bridge is ideal for a variety of motor-drive applications in office automation, computer peripherals, and portable consumer products.
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