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IXYS Expands its Range of 1200 V MOSFETs

The manufacturer says...

Chipcenter's Nasser Kutkut, Ph.D., says...

IXYS Corporation is now offering an expanded range of 1200 V MOSFETs, which can provide a greater safety margin and improved reliability in high-voltage power-conversion applications. The family includes a number of small, economical sizes, as well as the industry's highest current, rugged HiPerFET™ versions in the high-power SOT-227 package. IXYS' power MOSFETs are industry-recognized for their excellent ruggedness and reliability. The high transconductance of these devices continues to enable the designer to reduce their gate-drive requirements, while still maintaining very high switching speeds. IXYS' HiPerFET™ technology provides additional dV/dt capability, and includes an intrinsic fast-recovery diode. These devices reduce the recovery time of the body diode to 250 ns or less, even at elevated temperatures. The dV/dt withstand capability of IXYS' HiPerFETs™ offer significant safety margins for the stresses encountered in high-voltage switching applications. The 3 A, 1200 V rated IXTP3N120 offered in the economical TO-220 package is available in high volumes and replaces similar popular components since discontinued by other power-semiconductor manufacturers. The 32 A, 1200 V rated IXFN32N120 is a HiPerFET™, which is offered in the large, high-performance SOT-227 package, and is currently available in sample quantities. This family of high-voltage MOSFETs will complement IXYS' other high-voltage lines, finding applications in a diverse range of products such as switching power supplies (flyback and other topologies), electronic lamp starters, lamp ballasts, high-voltage-gradient amplifiers, induction heating equipment, and battery chargers for telecommunications.

A new series of 1200 V MOSFETs with intrinsic fast-recovery diodes is now available from IXYS. The new 1200 V series is based on IXYS' HyperFET technology, and incorporates ultrafast diodes with less than 250 ns of reverse-recovery time. Extending the voltage range of such MOSFETs offers an alternative to IGBTs in high-voltage SMPS applications. Unlike IGBTs, MOSFETs feature lower switching losses, allowing for higher switching frequencies, and resulting in components with smaller size and weight. Although their conduction losses are higher than IGBTs, the advantages gained by the higher switching frequencies overcome such limitations.

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